Semiconductor device having a fuse element
AssigneeRenesas Electronics Corporation
InventorShigeki Obayashi
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Abstract
The present invention provides a semiconductor device realizing reliable cutting of a fuse without enlarging layout area of a fuse element and the reduced number of wiring layers of a preventing wall that prevents diffusion of fuse copper atoms. A fuse is formed by using a wire in a metal wiring layer as an upper layer in a plurality of metal wiring layers. Wires are disposed just above and just below a fuse each with a gap of at least two wiring layers. In an upper layer, a power wire that transmits power supply voltage is used as a part covering a preventing wall structure just above the fuse.
Claims10
A semiconductor device comprising:
- a semiconductor element in a semiconductor substrate;
- first wires formed over the semiconductor element and formed at a first wiring layer;
- second wires electrically connected to the first wires and formed at a second wiring layer which is one level upper than the first wiring layer;
- third wires electrically connected to the second wires and formed at a third wiring layer which is one level upper than the second wiring layer;
- fourth wires electrically connected to the third wires and formed at a fourth wiring layer which is one level upper than the third wiring layer;
- a power supply wire formed at a fifth wiring layer which is one level upper than the fourth wiring layer;
- and
- a fuse formed at the third wiring layer, wherein
- the fuse includes a copper film,
- the power supply wire overlaps the fuse in a planar view,
- a diffusion preventing film having the first, second, third and fourth wires does not overlap the fuse in a planar view and surrounds the fuse in a planar view, and
- in regions which overlap the fuse in a planar view, no wire is formed in the second and fourth wiring layers.
Dependencies are inferred from the claim text.