Semiconductor device with integrated piezoelectric elements and support circuitry

A semiconductor device, comprising:

• a semiconductor substrate die of uniform thickness, thinned from a starting wafer thickness by chemically etching a back side;
• the die capable of flexing, when supported,in response to an applied stress;
• one or more piezoelectric elements formed integrally within a sensing region of the die for generating electrical signals in response the flexing of the die;
• support circuitry formed integrally within the die in close proximity to the sensing region;
• and
• conductive leads formed integrally within the die for electrically communicating the generated electrical signals from the one or more piezoelectric elements to the support circuitry without the use of a bond wire.

A semiconductor pressure sensing device, comprising:

• a die cut from a wafer thinned by back side chemical etching to a uniform thickness of between about 6 mils and about 8 mils;
• the die capable of flexing, when supported, in response to a force applied thereto;
• one or more piezoresistive elements in the form of silicon resistors formed integrally via doping and diffusion in Wheatstone bridge configuration within a sensing region of the die;
• the one or more piezoelectric elements generating electrical signals in response to the flexing of the die;
• support circuitry formed outside the sensing region integrally within the die;
• conductive leads formed integrally within the die for electrically communicating the generated electrical signals from the one or more piezoelectric elements to the support circuitry;
• and
• a sensor housing having an aperture;
• the die being seated to serve as a deformable diaphragm atop the aperture of the sensor housing;
• whereby deformation of the seated die in response to changes in pressure will cause changes in resistance of the piezoresistive elements to produce corresponding signals communicated by the conductive leads and processed by the support circuitry.