Semiconductor device having gate insulating film including high dielectric material

A semiconductor device, comprising:

• a first metal insulator semiconductor (MIS) transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film;
• and
• a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of a first silicon film formed on the second high dielectric film,
• wherein the first high dielectric film and the second high dielectric film include a same high dielectric material, and
• the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal,
• the semiconductor device further includes a second MIS transistor of a second conductivity type having a second active region as a region of the semiconductor substrate surrounded by the element isolation region formed in an upper portion of the semiconductor substrate, a second gate insulating film having a third high dielectric film formed on the second active region, and a second gate electrode formed on the second gate insulating film,
• the third high dielectric film includes the same high dielectric material as the first high dielectric film and the second high dielectric film, and includes a second adjustment metal, but does not include the first adjustment metal, and
• the second gate insulating film includes a second underlying insulating film formed on the second active region, the third high dielectric film formed on the second underlying insulating film, and a second adjustment metal-containing film containing the second adjustment metal formed on the third high dielectric film.