Substrate processing apparatus and method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device using a substrate processing apparatus including a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member, and a conductive substrate cooling unit which is provided below a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate, the method comprising:

• loading the substrate having a front surface including a dielectric into the processing chamber and supporting the substrate on the substrate support member;
• controlling the substrate support member such that a distance between a top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the supplied microwave;
• supplying the microwave to the front surface side of the substrate supported on the substrate support member;
• cooling the substrate from the rear surface side of the substrate supported on the substrate support member while the microwave is being supplied;
• after supplying the microwave, stopping supplying the microwave and controlling the substrate support member such that the distance between the top of the substrate support member and the opposing surface of the substrate cooling unit is shorter than the distance during supplying the microwave to cool the substrate;
• and
• unloading the substrate out of the processing chamber.

A method of manufacturing a semiconductor device using a substrate processing apparatus including a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member, and a conductive substrate cooling unit which is provided below a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate, the method comprising:

• loading the substrate having a front surface including a dielectric into the processing chamber and supporting the substrate on the substrate support member;
• setting a distance between the top of the substrate support member and the opposing surface of the substrate cooling unit to correspond to an odd multiple of ¼ wavelength of the supplied microwave;
• supplying the microwave to the front surface side of the substrate supported on the substrate support member under the state where the distance between the top of the substrate support member and the opposing surface of the substrate cooling unit is set to correspond to an odd multiple of ¼ wavelength of the supplied microwave;
• cooling the substrate from the rear surface side of the substrate supported on the substrate support member while the microwave is being supplied;
• after supplying the microwave, stopping supplying the microwave and controlling the substrate support member such that the distance between the top of the substrate support member and the opposing surface of the substrate cooling unit is shorter than the distance during supplying the microwave to cool the substrate;
• and
• unloading the substrate out of the processing chamber.