Etching solution composition for metal films
AssigneesKanto Kagaku Kabushiki Kaisha, Sanyo Electric Co., Ltd., SANYO Semiconductor Manufacturing Co., Ltd.
InventorsKazuhiro Fujikawa, Tsuguhiro Tago
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Abstract
The present invention aims to provide an etching solution composition which enables to etch a metal film in a controllable manner, form a desired definite tapered shape, and obtain a smooth surface without causing etching solution exudation trace. Said problems have been solved by the present invention, which is an etching solution composition for etching metal films containing one or more surfactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid and the salts thereof.
Claims11
A method for etching a metal film into a tapered shape comprising contacting a resist pattern formed on the metal film with an etching solution composition comprising one or more surfactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid, and the salts thereof, and further comprising phosphoric acid, nitric acid and acetic acid, wherein the concentration of nitric acid is 15.0% to 30.0% by mass.
Dependencies are inferred from the claim text.