Method of manufacturing SOI substrate and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first insulating film on a first substrate, wherein the first substrate comprises single-crystal semiconductor;
• introducing ions comprising H3+ ions into the first substrate to form an embrittled layer therein;
• forming a second insulating film over a second substrate;
• irradiating both of a surface of the first insulating film and a surface of the second insulating film with a beam in a vacuum, whereby both of the surface of the first insulating film and the surface of the second insulating film are etched and activated;
• bonding the first insulating film on the first substrate and the second insulating film over the second substrate together after the step of irradiating;
• and
• forming a single-crystal semiconductor film over the second substrate by separating the single-crystal semiconductor film from the first substrate at an interface of the embrittled layer in the first substrate,
• wherein a material of the first insulating film is the same as that of the second insulating film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first insulating film on a first substrate, wherein the first substrate comprises single-crystal semiconductor;
• introducing ions comprising H2+ ions into the first substrate to form an embrittled layer therein;
• forming a second insulating film and a third insulating film in order over a second substrate;
• irradiating both of a surface of the first insulating film and a surface of the third insulating film with a beam in a vacuum, whereby both of the surface of the first insulating film and the surface of the third insulating film are etched and activated;
• bonding the first insulating film on the first substrate and the third insulating film over the second substrate after the step of irradiating;
• and
• forming a single-crystal semiconductor film over the second substrate by separating the single-crystal semiconductor film from the first substrate at an interface of the embrittled layer in the first substrate,
• wherein a material of the first insulating film is the same as that of the third insulating film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a first insulating film on a first substrate, wherein the first substrate comprises single-crystal semiconductor;
• introducing ions comprising H2+ ions into the first substrate to form an embrittled layer therein;
• forming a second insulating film over a second substrate;
• irradiating both of a surface of the first insulating film and a surface of the second insulating film with a beam in a vacuum, whereby both of the surface of the first insulating film and the surface of the second insulating film are etched and activated;
• bonding the first insulating film on the first substrate and the second insulating film over the second substrate together after the step of irradiating;
• and
• forming a single-crystal semiconductor film over the second substrate by separating the single-crystal semiconductor film from the first substrate at an interface of the embrittled layer in the first substrate,
• wherein a material of the first insulating film is the same as that of the second insulating film.