Recessed source and drain regions for FinFETs
AssigneeInternational Business Machines Corporation
InventorsJosephine B. Chang, Paul Chang, Michael A. Guillorn, Chung-Hsun Lin, Jeffrey W. Sleight
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Abstract
Semiconductor devices and methods that include forming a fin field effect transistor by defining a fin hardmask on a semiconductor layer, forming a dummy structure over the fin hardmask to establish a planar area on the semiconductor layer, removing a portion of the fin hardmask that extends beyond the dummy structure, etching a semiconductor layer adjacent to the dummy structure to produce recessed source and drain regions, removing the dummy structure, etching the semiconductor layer in the planar area to produce fins, and forming a gate stack over the fins.
Claims10
A method for forming a fin field effect transistor, comprising defining a fin hardmask on a semiconductor layer;
- forming a dummy structure over the fin hardmask to establish a planar area on the semiconductor layer;
- removing a portion of the fin hardmask that extends beyond the dummy structure;
- etching a semiconductor layer adjacent to the dummy structure to produce recessed source and drain regions;
- removing the dummy structure;
- etching the semiconductor layer in the planar area to produce fins;
- and
- forming a gate stack over the fins.
A method for forming a fin field effect transistor, comprising
- defining a fin hardmask on a semiconductor layer;
- forming a dummy structure over the fin hardmask to establish a planar area on the semiconductor layer;
- removing a portion of the fin hardmask that extends beyond the dummy structure;
- etching a semiconductor layer adjacent to the dummy structure with a timed reactive ion etch to produce recessed source and drain regions;
- forming a conducting layer on the recessed source and drain regions by forming a metal layer on the recessed source and drain regions and annealing the metal layer to form a silicide;
- removing the dummy structure;
- etching the semiconductor layer in the planar area to produce fins at the fin hardmask;
- and
- forming a gate stack over the fins.
Dependencies are inferred from the claim text.