Manufacturing method of semiconductor device, exposure method, and exposure apparatus
AssigneeRenesas Electronics Corporation
InventorSeiichiro Shirai
Life of this patent
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Abstract
An exposure apparatus includes a light emission part 10 generating EUV light by plasma excitation of a predetermined atom, a condenser part 20 condensing the EUV light emitted from the light emission part, an exposure part 30 irradiating a substrate via a mask with the EUV light condensed by the condenser part, a first plasma position monitor 11a detecting the position of an emission point of the EUV light within the light emission part, and a light emission part drive unit 13 adjusting the position of the light emission part. The exposure apparatus determines a first shift amount between the emission point detected by the plasma position monitor and a reference light emission position, and drives the light emission part drive unit according to the first shift amount.
Claims23
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) preparing an exposure apparatus which includes
- (a1) a light emission part generating EUV light by plasma excitation of a predetermined atom,
- (a2) a condenser part condensing the EUV light emitted from the light emission part,
- (a3) an exposure part irradiating a substrate via a mask with the EUV light condensed by the condenser part,
- (a4) a monitor detecting a position of an emission point of the EUV light within the light emission part, and
- (a5) a drive part adjusting a position of the light emission part;
- (b) adjusting the exposure apparatus;
- the adjusting step including the steps of,
- (b1) generating the EUV light in the light emission part,
- (b2) detecting the emission point of the EUV light by the monitor,
- (b3) calculating a shift amount between the emission point and a reference emission point, and
- (b4) adjusting the position of the emission point of the EUV light by driving the drive part according to a calculation result of the shift amount;
- and
- (c) exposing a light sensitive film formed above the substrate, the exposing step, after the (b4) step, guiding corrected EUV light, which has been emitted from the light emission part and condensed by the condenser part, to the exposure part to expose the light sensitive film within the exposure part.
A manufacturing method of a semiconductor device, comprising the steps of:
- (a) preparing an exposure apparatus which includes
- (a1) a light emission part generating EUV light by plasma excitation of a predetermined atom,
- (a2) a condenser part condensing the EUV light emitted from the light emission part,
- (a3) an exposure part irradiating a substrate via a mask with the EUV light condensed by the condenser part
- (a4) a monitor detecting a position of a focus of the EUV light condensed by the condenser part, and
- (a5) a drive part adjusting a position of the condenser part;
- (b) adjusting the exposure apparatus, the adjusting step including the steps of,
- (b1) generating the EUV light in the light emission part,
- (b2) detecting the focus of the EUV light by the monitor,
- (b3) calculating a shift amount between the focus and a reference focus, and
- (b4) adjusting the position of the focus of the EUV light by driving the drive part according to a calculation result of the shift amount;
- and
- (c) exposing a light sensitive film formed above the substrate, the exposing step, after the (b4) step, guiding corrected EUV light, which has been emitted from the light emission part and condensed by the condenser part, to the exposure part to expose the light sensitive film within the exposure part.
An exposure method of an exposure apparatus, the method comprising the steps of:
- determining a shift amount between an emission point detected by a monitor and a reference light emission position by using an exposure apparatus which includes:
- a light emission part generating EUV light by plasma excitation of a predetermined atom;
- a condenser part condensing the EUV light emitted from the light emission part;
- an exposure part irradiating a substrate via a mask with the EUV light condensed by the condenser part;
- the monitor detecting a position of the emission point of the EUV light within the light emission part;
- and a drive part adjusting a position of the light emission part;
- and
- driving the drive part according to the shift amount.
An exposure apparatus, comprising:
- a light emission part generating EUV light by plasma excitation of a predetermined atom;
- a condenser part condensing the EUV light emitted from the light emission part;
- an exposure part irradiating a substrate via a mask with the EUV light condensed by the condenser part;
- a first monitor detecting a position of an emission point of the EUV light within the light emission part;
- and
- a first drive part adjusting a position of the light emission part, wherein
- the exposure apparatus determines a first shift amount between the emission point detected by the first monitor and a reference light emission position and drives the first drive part according to the first shift amount.
Dependencies are inferred from the claim text.