Nano-imprint lithography methods
AssigneeSamsumg Electronics Co., Ltd.
InventorsYoung Tae Cho, Suk Won Lee, Sin Kwon, Jung Woo Seo, Jeong Gil Kim
Life of this patent
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Abstract
In forming a pattern on a substrate with reduced pattern error using a mold having an area smaller than an area of the substrate, a first resin pattern is formed on at least a first of a plurality of regions of an etching object layer by imprinting resin applied to the etching object layer using a first mold The etching object layer is then etched using the first resin pattern as an etching mask. A second resin pattern is formed on at least a second of the plurality of regions by imprinting resin applied to the etching object layer using a second mold. The etching object layer is again etched using the second resin pattern as an etching mask.
Claims9
A nano-imprint lithography method comprising:
- forming a first resin pattern on at least a first of a plurality of regions of an object layer by imprinting a first resin layer applied to the object layer using a first mold;
- etching the first of the plurality of regions of the object layer using the first resin pattern as an etching mask;
- forming a second resin pattern on at least a second of the plurality of regions by imprinting a second resin layer applied to the etched object layer using a second mold;
- and
- etching the second of the plurality of regions of the object layer using the second resin pattern as an etching mask, wherein the first of the plurality of regions is not etched when etching the second of the plurality of regions of the object layer.
Dependencies are inferred from the claim text.