Shadow mask, method of manufacturing the same and method of forming thin film using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSeok-whan Chung, Seok-jin Kang, Hyun-koo Jeong
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Abstract
A shadow mask, a method of manufacturing the shadow mask, and a method of forming a thin film using the shadow mask are provided. The shadow mask includes an upper layer and a lower layer. The upper layer includes a first opening. The lower layer is formed on a lower surface of the upper layer around the first opening and includes an opening having the same size as the first opening. When the thin film is formed using the shadow mask, the lower layer of the shadow mask is close to the edge of a cavity of a substrate, and a position on which the thin film may be formed as defined by the lower layer of the shadow mask. Therefore, the thickness of the thin film can be uniform.
Claims14
A shadow mask comprising:
- an upper layer including a first opening formed through the upper layer in a thickness direction;
- and
- a lower layer formed on a lower surface of the upper layer around the first opening and including an opening having the same size as the first opening,
- wherein an outer width of the lower layer in a widthwise direction substantially perpendicular to the thickness direction is smaller than an outer width of the upper layer in the widthwise direction, and
- wherein the lower layer is a downward protruding portion of the shadow mask, and is disposed lower than an outer portion of the upper layer and configured to be inserted into a cavity of a substrate.
A shadow mask comprising:
- an upper layer including a first opening formed through the upper layer in a thickness direction;
- and
- a lower layer formed on a lower surface of the upper layer around the first opening and including an opening having the same size as the first opening,
- wherein an outer width of the lower layer in a widthwise direction substantially perpendicular to the thickness direction is smaller than an outer width of the upper layer in the widthwise direction,
- wherein the upper layer and the lower layer are silicon layers.
Dependencies are inferred from the claim text.