US 8,552,530 B2 · Vertical transient voltage suppressors

Abstract

A vertical transient voltage suppressor for protecting an electronic device is disclosed. The vertical transient voltage includes a conductivity type substrate having highly doping concentration; a first type lightly doped region is arranged on the conductivity type substrate, wherein the conductivity type substrate and the first type lightly doped region respectively belong to opposite types; a first type heavily doped region and a second type heavily doped region are arranged in the first type lightly doped region, wherein the first and second type heavily doped regions and the conductivity type substrate belong to same types; and a deep first type heavily doped region is arranged on the conductivity type substrate and neighbors the first type lightly doped region, wherein the deep first type heavily doped region and the first type lightly doped region respectively belong to opposite types, and wherein the deep first type heavily doped region is coupled to the first type heavily doped region.

Claims15

Dependent claims

A vertical transient voltage suppressor for ESD protection, comprising:

a conductivity type substrate, having highly doping concentration and being a first type;
a first lightly doped region, arranged on the conductivity type substrate and being a second type;
a first heavily doped region, completely formed within the first lightly doped region and being the first type;
a second heavily doped region, completely formed within the first lightly doped region and being the first type;
a first deep heavily doped region, being the first type, arranged on the conductivity type substrate, neighboring the first lightly doped region, and coupled to the first heavily doped region;
and
a first pin, connected to the second heavily doped region, wherein the first pin is connected to a circuit terminal to be protected;
a second pin, connected to the conductivity type substrate, wherein the second pin is connected to a ground terminal;
wherein the first type and the second type are opposite.

6 more elements

A vertical transient voltage suppressor for ESD protection, comprising:

a conductivity type substrate having highly doping concentration and being a first type;
a first lightly doped region, arranged on the conductivity type substrate and being a second type;
a first heavily doped region, completely formed within the first lightly doped region and being the first type;
a second heavily doped region, completely formed within the first lightly doped region and being the first type;
a third heavily doped region, completely formed within the first lightly doped region and being the second type;
a first deep heavily doped region, arranged on the conductivity type substrate, neighboring the first lightly doped region, being the first type, and coupled to both the first heavily doped region and the third heavily doped region;
and
a first pin, connected to the second heavily doped region, wherein the first pin is connected to a circuit terminal to be protected;
a second pin, connected to the conductivity type substrate, wherein the second pin is connected to a ground terminal;
wherein the first type and the second type are opposite types.

7 more elements

A vertical transient voltage suppressor for ESD protection, comprising:

a conductivity type substrate having highly doping concentration and being a first type;
a first lightly doped region, arranged on the conductivity type substrate and being a second type;
a first heavily doped region, completely formed within the first lightly doped region and being the first type;
a second heavily doped region, completely formed within the first lightly doped region and being the second type;
a first deep heavily doped region, arranged on the conductivity type substrate, neighboring the first lightly doped region, being the first type, and coupled to the second heavily doped region;
a first pin, connected to the first heavily doped region, wherein the first pin is connected to a circuit terminal to be protected;
and
a second pin, connected to the conductivity type substrate, wherein the second pin is connected to a ground terminal;
wherein the first type and the second type are opposite types.

6 more elements

Dependencies are inferred from the claim text.

Vertical transient voltage suppressors

Life of this patent

Vertical transient voltage suppressors

Life of this patent

Abstract

Claims15