Applying trenched transient voltage suppressor (TVS) technology for distributed low pass filters
AssigneeAlpha and Omega Semiconductor Incorporated
InventorMadhur Bobde
Life of this patent
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Abstract
An electronic circuit includes a filtering circuit implemented with a distributed inductor-and-capacitor (LC) network that includes metal oxide effect (MOS) trenches opened in a semiconductor substrate filled with dielectric material for functioning as capacitors for the distributed LC network. The electronic circuit further includes a transient voltage suppressing (TVS) circuit integrated with the filtering circuit that functions as a low pass filter wherein the TVS circuit includes a bipolar transistor triggered by a diode disposed in the semiconductor substrate. The distributed LC network further includes metal coils to function as inductors disposed on a top surface of the semiconductor electrically contacting the MOS trenches.
Claims24
An electronic circuit comprising:
- a filtering circuit includes distributed inductor-and-capacitor (LC) network comprising metal oxide effect (MOS) trenches opened along a vertical direction in a semiconductor substrate filled with a conductive material functioning as capacitors connected to metal strips configured as inductor coils disposed on a top surface of said semiconductor constituting interconnected inductors with said MOS trenches opened as pair of parallel trenches directly beneath and extend downwardly from two outer edges of the metal strips in said semiconductor substrate underneath said metal strips constituting said capacitors for said distributed LC network;
- and
- said filtering circuit further comprises an input I/O pad disposed on the top surface of the semiconductor substrate connected to said inductor coils.
An electronic circuit comprising:
- a filtering circuit comprising a linear polynomial filter includes an inductor-and-capacitor (LC) ladder network comprising metal strips configured as metal coils disposed on top a semiconductor substrate and metal oxide effect (MOS) trenches opened as pair of parallel trenches in a semiconductor substrate directly beneath and extend downwardly from two outer edges of the metal strips in said semiconductor substrate underneath said metal strips filled with insulated conductive material functioning as capacitors for said LC ladder network.
A method for configuring an electronic circuit comprising:
- forming a filtering circuit in a semiconductor substrate as a inductor-and-capacitor (LC) network by opening a plurality of pair of parallel trenches in said semiconductor substrate and filling said trenches with insulated conductive material to function as metal-oxide-semiconductor (MOS) capacitors for said distributed LC network;
- and
- forming and configuring metal strips as inductor coils on a top surface of said semiconductor constituting interconnected inductors with said trenches opened in said semiconductor substrate underneath said metal strips constituting said MOS capacitors for said LC ladder for connecting to said MOS capacitors for said distributed LC network.
Dependencies are inferred from the claim text.