Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device
AssigneeFreescale Semiconductor, Inc.
InventorsMarius Orlowski, Andreas Wild
Life of this patent
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Abstract
A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises semiconductor substrate, a first layer of a first semiconductor material over the semiconductor substrate and a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material.
Claims25
A device comprising:
- an inverted T channel field effect transistor comprising an inverted T-shaped channel structure having a vertical channel portion and a horizontal channel portion at a bottom of the vertical channel portion, concave corners at an intersection of the vertical channel portion and the horizontal channel portion having a curvature radius of between 2 and 15 nanometers.
A device comprising:
- an inverted T channel field effect transistor comprising an inverted T-shaped channel structure having a vertical channel portion of a first semiconductor material and a horizontal channel portion at a bottom of the vertical channel portion of a second semiconductor material such that for a same etch condition the second semiconductor material has an etch rate that is less than an etch rate of the first semiconductor material.
A device comprising:
- an inverted T channel field effect transistor comprising an inverted T-shaped channel structure having a vertical channel portion of a first semiconductor material and a horizontal channel portion at a bottom of the vertical channel portion, one of either the vertical channel portion or the horizontal channel portion being an intrinsic semiconductor alloy comprising a first semiconductor and a second semiconductor, with a concentration of the second semiconductor increasing as a distance from a junction between the vertical and horizontal channel portions increases.
Dependencies are inferred from the claim text.