SOI trench DRAM structure with backside strap

A semiconductor structure comprising:

• a silicon-on-insulator substrate comprised of a top silicon layer overlying an insulation layer, where the insulation layer overlies a bottom silicon layer;
• a capacitor disposed at least partially in the insulation layer;
• a transistor disposed at least partially on the top silicon layer, where the transistor is coupled to a doped portion of the top silicon layer, where the doped portion of the top silicon layer comprises a source/drain region for the transistor;
• a backside strap comprised of first epitaxially-deposited material, where at least a first portion of the backside strap underlies the source/drain region, where the backside strap is coupled to a bottom of the source/drain region at a first end of the backside strap and to the capacitor at a second end of the backside strap;
• and
• second epitaxially-deposited material that at least partially overlies the source/drain region, where the second epitaxially-deposited material further at least partially overlies the first portion of the backside strap.