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US 8,552,478 B2Granted
Corner transistor and method of fabricating the same
AssigneeNanya Technology Corporation
InventorsTieh-Chiang Wu, Yu-Teh Chiang, Yu-Wei Ting
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Abstract
A method of fabricating a corner transistor is described. An isolation structure is formed in a substrate to define an active region. A treating process is performed to make the substrate in the active region have sharp corners at top edges thereof. The substrate in the active region is covered by a gate dielectric layer. A gate conductor is formed over the gate dielectric layer. A source region and a drain region are formed in the substrate beside the gate conductor.
Claims20
A method of fabricating a corner transistor, comprising:
- forming an isolation structure in a substrate to define an active area;
- performing a treating process to make the substrate in the active area have sharp corners at top edges thereof;
- covering the substrate in the active area by a gate dielectric layer;
- forming a gate conductor over the gate dielectric layer;
- and
- forming a source region and a drain region in the substrate beside the gate conductor, wherein a top surface of the gate conductor is lower than a top surface of the source region and a top surface of the drain region.
3 more elements
A corner transistor, comprising:
- a substrate, having therein an isolation structure defining an active area, wherein the substrate in the active area have sharp corners at two edges thereof;
- a gate dielectric layer, covering the substrate in the active area;
- a gate conductor over the gate dielectric layer;
- and
- a source region and a drain region in the substrate beside the gate conductor, wherein a top surface of the gate conductor is lower than a top surface of the source region and a top surface of the drain region.
2 more elements
Dependencies are inferred from the claim text.