Four-quadrant triac
AssigneeSTMicroelectronics (Tours) SAS
InventorsSamuel Menard, Dalaf Ali
Life of this patent
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Abstract
A vertical four-quadrant triac wherein the gate region, arranged on the side of a front surface, includes a U-shaped region of a first conductivity type, the base of the U lying against one side of the structure, the main front surface region of the second conductivity type extending in front of the gate region and being surrounded with portions of the main front surface region of the first conductivity type.
Claims14
A vertical four-quadrant triac wherein a gate region, arranged on a side of a front surface, comprises a U-shaped region of a first conductivity type, a base of the U-shaped region lying towards one side of a structure of the triac, a main front surface region of a second conductivity type extending in front of the gate region and being surrounded with portions of a main front surface region of the first conductivity type, wherein the gate region is located at the middle of said one side of the structure of the triac and is located closer to said one side than to an opposite side of the structure of the triac.
A vertical four-quadrant triac comprising:
- a first layered structure;
- a second layered structure side-by-side with the first layered structure;
- and
- a gate structure in contact with the first and second layered structures, the gate structure including a U-shaped region of a first conductivity type, wherein the vertical four-quadrant triac has a substantially square contour and wherein the gate structure is located at the middle of one side of the square contour and is located closer to said one side of the square contour than to an opposite side of the square contour.
Dependencies are inferred from the claim text.