Method and apparatus for thermal analysis of through-silicon via (TSV)

A non-transitory computer readable medium storing a computer program for performing thermal analysis of an integrated circuit (“IC”) design layout, the computer program executable by at least one processor, the computer program comprising sets of instructions for:

• dividing the IC design layout into a set of elements, said IC design layout comprising a wiring layer and a substrate, said substrate comprising a set of through-silicon vias (“TSVs”), each TSV extending through the substrate and conducting an electrical current from the wiring layer to circuits outside of the IC;
• computing conductivity values for each element by using parameterized functions;
• and
• identifying a temperature distribution for the IC design layout based on the computed conductivity values.

A system comprising:

• a processor for executing sets of instructions;
• and
• a memory for storing a computer program for performing thermal analysis of an integrated circuit (“IC”) design layout, the computer program comprising sets of instructions for:
• dividing the IC design layout into a set of elements, said IC design layout comprising a wiring layer and a substrate, said substrate comprising a non-metal component and a metal component, said metal component comprising a set of through-silicon vias (“TSVs”), each TSV extending through the substrate and conducting an electrical current, wherein at least one element comprises a combination of a portion of a TSV and a portion of the non-metal component;
• computing an effective thermal conductivity value for each element based on an amount of metal component in each element;
• and
• identifying a temperature distribution for the IC design layout based on the computed effective thermal conductivity values.

A system comprising:

• a processor for executing sets of instructions;
• and
• a memory for storing a computer program for performing thermal analysis of an integrated circuit (“IC”) design layout, the computer program comprising sets of instructions for:
• dividing the IC design layout into a set of elements, said IC design layout comprising a wiring layer and a substrate, said substrate comprising a set of through-silicon vias (“TSVs”), each TSV extending through the substrate and conducting an electrical current from the wiring layer to circuits outside of the IC;
• computing conductivity values for each element by using parameterized functions;
• and
• identifying a temperature distribution for the IC design layout based on the computed conductivity values.