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US 8,542,539 B2Granted
NAND flash memory programming
AssigneeMicron Technology, Inc.
InventorsRamin Ghodsi, Qiang Tang
Life of this patent
Estimating the term…
Abstract
A method of charging a floating gate in a nonvolatile memory cell comprises bringing a substrate channel within the memory cell to a first voltage, bringing a control gate to a programming voltage, and floating the substrate channel voltage while the control gate is at the programming voltage. Memory devices include state machines or controllers operable to perform the described method, and operation of such a state machine, memory device, and information handling system are described.
Claims10
A method comprising:
- bringing a channel voltage of a channel of a memory cell to a first voltage;
- bringing a control gate of the memory cell to a programming voltage, wherein the programming voltage is higher than the first voltage;
- and
- floating the channel voltage while the control gate is at the programming voltage, wherein bringing the channel voltage to the first voltage comprises coupling at least one of a source or a drain of a string of memory cells including the memory cell to the first voltage, and floating the channel voltage comprises electrically floating voltage on at least one of a source line or a drain line electrically coupled to the channel of the memory cell.
1 more element
A method comprising:
- applying a programming voltage to a control gate of a memory cell in a programming operation that programs data into the memory cell;
- and
- allowing a channel of the memory cell to float during a portion of the programming operation of the data into the memory cell by electrically floating voltage on at least one of a source line or a drain line electrically coupled to the channel of the memory cell.
Dependencies are inferred from the claim text.