Photo-responsive memory resistor and method of operation
AssigneeHewlett-Packard Development Company, L.P.
InventorsAlexandre M. Bratkovski, Iakov Veniaminovitch Kopelevitch
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Abstract
An optically-controlled memory resistor includes (1) a memory resistor having a first electrode, a second electrode, and a photo-responsive active layer disposed between the first and second electrodes and (2) a light source in cooperation with the memory resistor. The light source is configured to controllably illuminate the memory resistor for affecting a resistance state exhibited by the memory resistor. Also, a method for operating a memory resistor includes changing a resistance state of the memory resistor in response to an application of photons to the memory resistor.
Claims7
An optically-controllable memory resistor, comprising:
- a memory resistor comprising a first electrode, a second electrode, and a photo-responsive active layer disposed between the first and second electrodes, wherein:
- at least one of the electrodes comprises an optically-transmissive electrode for permitting photons to impact the photo-responsive active layer, and
- the photo-responsive active layer is formed from a transition metal oxide and is such that the photons impacting the photo-responsive active layer alter a voltage threshold at which the photo-responsive active layer switches between a first resistance state and a second resistance state.
Dependencies are inferred from the claim text.