Magneto-resistance effect element, and method for manufacturing the same

A magneto-resistance effect element, comprising:

• a bottom electrode;
• a first fixed magnetization layer formed on or above the bottom electrode, the first fixed magnetization layer having a magnetization substantially fixed in one direction;
• a magnetic coupling layer formed on the first fixed magnetization layer;
• a second fixed magnetization layer formed on the magnetic coupling layer, the second fixed magnetization layer having a magnetization substantially fixed in one direction;
• a spacer layer including a first metallic layer, a current confining layer, and a second metallic layer subsequently stacked therein on the second fixed magnetization layer,
• the first metallic layer containing at least one element selected from the group consisting of Cu, Ag, and Au,
• the current confining layer having an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, the insulating layer including oxide, nitride or oxynitride, the conductor containing at least one element selected from the group consisting of Cu, Al, and Au,
• the second metallic layer containing at least one element selected from the group consisting of Cu, Ag, and Au;
• a free magnetization layer formed on the spacer layer, the free magnetization layer having a magnetization rotated in accordance with an external magnetic field;
• a functional layer formed in or on the second fixed magnetization layer, the functional layer containing at least one element selected from the group consisting of Si, Mg, B, and Al;
• and
• a top electrode formed on or above the free magnetization layer, the top electrode being configured to pass electric current in combination with the bottom electrode,
• wherein an Fe composition in a region of the second fixed magnetization layer and/or the free magnetization layer remote from the spacer layer by 1 nm or less is set to 10% or more.

A magneto-resistance effect element, comprising:

• a bottom electrode;
• a first fixed magnetization layer formed on or above the bottom electrode, the first fixed magnetization having a magnetization substantially fixed in one direction;
• a magnetic coupling layer formed on the first fixed magnetization layer;
• a second fixed magnetization layer formed on the magnetic coupling layer, the second fixed magnetization layer having a magnetization substantially fixed in one direction;
• a free magnetization layer formed opposite to the second fixed magnetization layer, the free magnetization layer having a magnetization rotated in accordance with an external magnetic field;
• an insulating spacer layer disposed between the second fixed magnetization layer and the free magnetization layer, the insulating spacer layer passing a tunnel current therethrough;
• a functional layer formed in or on the second fixed magnetization layer, the functional layer containing at least one element selected from the group consisting of Si, Mg, B, and Al;
• and
• a top electrode formed on or above the free magnetization layer, the top electrode being configured to pass electric current in combination with the bottom electrode.