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US 8,542,058 B2Granted
Semiconductor device including body connected FETs
AssigneeInternational Business Machines Corporation
InventorsMyung-Hee Na, Edward J. Nowak
Life of this patent
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Abstract
A semiconductor device includes: a first field-effect transistor (FET); and a second FET of similar polarity to the first FET, wherein a body of the first FET is electrically coupled to a body of the second FET, and a source of the first FET is electrically coupled to a source of the second FET, such that a body voltage of the second FET controls a body voltage of the first FET.
Claims1
A semiconductor device comprising:
- a first field-effect transistor (FET);
- a plurality of FETs connected in parallel, each of the plurality of FETs is of similar polarity to the first FET, wherein a body of each of the plurality of FETs is electrically coupled to each other along a first connection, each gate of the plurality of FETs is electrically coupled to each other along a second connection, each source of the plurality of FETs is electrically coupled to each other along a third connection, each drain of the plurality of FETs is electrically coupled to each other along a fourth connection, the first connection, the second connection, the third connection and the fourth connection are separate and distinct from each other;
- and
- an operational amplifier electrically connecting the body of each of the plurality of FETs to the body of the first FET, the operational amplifier including a first input, a second input and an output connected to the body of the first FET, the first input coupled to the body of each of the plurality of FETs along the first connection and the second input coupled to the output.
1 more element
Dependencies are inferred from the claim text.