Electrospun light-emitting fibers
AssigneeCornell University
InventorsJose M. Moran-Mirabal, Harold G. Craighead, George G. Malliaras, Héctor D. Abruna, Jason D. Slinker
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Abstract
The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6−)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
Claims36
An electrospun light-emitting fiber (ELF) comprising an electroluminescent material and a carrier substance, wherein the electroluminescent material is solution processahle and embedded in the carrier substance, wherein the ELF emits a localized light three-dimensionally confined to nanometer scale dimensions when subject to an operating voltage ranging from about 1V to about 10V.
The ELF of claim. 1, wherein the carrier substance is a polymeric substance.
The ELF of claim. 18, wherein the operating voltage ranges from about 3 to about 4 V.
An electrospun light-emitting fiber (ELF) comprising an electroluminescent organic material and a carrier substance, wherein the electroluminescent organic material is solution processable and embedded in the carrier substance, and wherein the electroluminescent organic material is a mixed conductor.
Dependencies are inferred from the claim text.