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US 8,541,892 B2Granted
Bonding connection between a bonding wire and a power semiconductor chip
AssigneeInfineon Technologies AG
InventorsDirk Siepe, Thomas Gutt, Roman Roth
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AssigneeInfineon Technologies AG
InventorsDirk Siepe, Thomas Gutt, Roman Roth
Estimating the term…
A bonding connection between a bonding wire and a power semiconductor chip is disclosed. The power semiconductor chip has a semiconductor body arranged in which is an active cell region with a multiplicity of cells arranged one following the other in a lateral direction and connected electrically in parallel. The semiconductor body has a surface portion arranged above the active cell region in a vertical direction perpendicular to the lateral direction. Applied to the surface portion is a metallization layer onto which a bonding wire is bonded. The bonding wire comprises an alloy containing at least 99% by weight aluminum and at least one further alloying constituent. The aluminum has a grain structure with a mean grain size which is less than 2 μm.
A power semiconductor arrangement comprising a bonding connection between a bonding wire and a power semiconductor chip, the power semiconductor chip including a semiconductor body arranged in which is an active cell region with a multiplicity of cells arranged one following the other in a lateral direction and connected electrically in parallel, wherein:
Dependencies are inferred from the claim text.