Stacked IC device with recessed conductive layers adjacent to interlevel conductors

A three-dimensional stacked IC device comprising:

• a stack of at least first, second, third and fourth contact levels;
• each contact level comprising a conductive layer and an insulation layer;
• first, second, third and fourth electrical conductors being within contact openings, the contact openings passing through portions of the stack of contact levels;
• the first, second, third and fourth electrical conductors terminating at and in electrical contact with the first, second, third and fourth conductive layers, respectively;
• the second electrical conductor is electrically isolated from the first conductive layer, the third electrical conductor is electrically isolated from the first and second conductive layers, and the fourth electrical conductor is electrically isolated from the first, second and third conductive layers;
• and
• portions of the conductive layers at the conductive openings being recessed relative to the adjacent insulation layers with electrical insulation between said adjacent insulation layers to provide enhanced electrical insulation between opposed conductive layers and electrical conductors.

An IC device comprising:

• a stack of contact levels, each contact level comprising a conductive layer and an insulation layer;
• first and second interlevel conductors within respective first and second openings in the stack of contact levels, the first opening passing through n contact levels of the stack of contact levels, the second opening passing through n+1 contact levels of the stack of contact levels, n being an integer equal to at least 1;
• the first interlevel conductor terminating at and in electrical contact with conductive layer n+1, the second interlevel conductor terminating at and in electrical contact with conductive layer n+2;
• and
• portions of conductive layers at the first and second openings being separated from the interlevel conductors by respective recesses having insulating material therein.