Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates
AssigneeThe Regents of the University of California
InventorsShuji Nakamura, James S. Speck, Steven P. DenBaars, Anurag Tyagi
Life of this patent
Estimating the term…
Abstract
A III-nitride edge-emitting laser diode is formed on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is cleaved by creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the III-nitride substrate, and then applying force along the cleavage line to create one or more cleaved facets of the III-nitride substrate, wherein the cleaved facets have an m-plane or a-plane orientation.
Claims10
An optoelectronic device, comprising:
- a III-nitride semiconductor light emitting device formed on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is a semipolar bulk III-nitride substrate and the III-nitride substrate is cleaved along a direction substantially perpendicular to the surface of the III-nitride substrate having the semipolar orientation, in order to create one or more cleaved facets, wherein the substrate has a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the substrate for the cleaved facets.
A process for fabricating an optoelectronic device, comprising:
- forming a III-nitride semiconductor light emitting device on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is a semipolar bulk III-nitride substrate;
- and
- cleaving the III-nitride substrate along a direction substantially perpendicular to the surface of the III-nitride substrate having the semipolar orientation, in order to create one or more cleaved facets;
- wherein the cleaving step comprises creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the substrate, and then applying force along the cleavage line to create the cleaved facets.
Dependencies are inferred from the claim text.