Semiconductor device with self-biased isolation

An electronic apparatus comprising:

• a reduced surface field (RESURF) transistor comprising:
• a first semiconductor region having a first conductivity type;
• a second semiconductor region having a second conductivity type and disposed above the first semiconductor region;
• a third semiconductor region having the first conductivity type and disposed above the second semiconductor region;
• a fourth semiconductor region having the first conductivity type and disposed above the third semiconductor region;
• and
• a fifth semiconductor region having the second conductivity type, wherein the fifth semiconductor region extends through the third semiconductor region to reach the second semiconductor region, and is electrically tied to the first semiconductor region, to bias the first semiconductor region based on a voltage applied to the fourth semiconductor region.