Infrared detection device
AssigneeKabushiki Kaisha Toshiba
InventorsMasaki Atsuta, Hideyuki Funaki, Keita Sasaki
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AssigneeKabushiki Kaisha Toshiba
InventorsMasaki Atsuta, Hideyuki Funaki, Keita Sasaki
Estimating the term…
According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.
An infrared detection device comprising a detection element,
Dependencies are inferred from the claim text.