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AssigneeMagIC Technologies, Inc.
InventorsGuenole Jan, Witold Kula, Ru Ying Tong, Yu Jen Wang
Estimating the term…
A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
A magnetic element, comprising:
A magnetic tunnel junction (MTJ) having a reference layer/tunnel barrier/free layer/spacer/seed layer/laminated dipole layer configuration wherein the seed layer is one of Hf, NiCr, NiFeCr, Hf/NiCr, Hf/NiFeCr, NiCr/Hf, or NiFeCr/Hf that enhances perpendicular magnetic anisotropy (PMA) in the overlying laminated dipole layer;
A magnetic tunnel junction (MTJ) having a seed layer/laminated free layer/tunnel barrier/reference layer configuration wherein the seed layer is one of Hf, NiCr, NiFeCr, Hf/NiCr, Hf/NiFeCr, NiCr/Hf, or NiFeCr/Hf that enhances perpendicular magnetic anisotropy (PMA) in the overlying laminated free layer;
Dependencies are inferred from the claim text.