Method of minimizing beam bending of MEMS device by reducing the interfacial bonding strength between sacrificial layer and MEMS structure
AssigneeInternational Business Machines Corporation
InventorsJohn M. Cotte, Nils D. Hoivik, Christopher Jahnes, Minhua Lu, Hongqing Zhang
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Abstract
The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.
Claims20
A structure for fabricating a MEMS device which comprises the structural layer of a MEMS device, a main sacrificial layer and an additional sacrificial buffer layer located between the MEMS structural layer and main sacrificial layer, wherein the additional sacrificial buffer layer is a different material than the main sacrificial layer and has weaker bonding strength to both the sacrificial layer and MEMS structural material as compared to the bonding strength between the main sacrificial layer and MEMS structural layer, wherein the main sacrificial layer has a thickness of about 10 nanometers to about 50,000 nanometers and the additional sacrificial buffer layer has a thickness of 100 nanometers or less and is thinner than the main sacrificial layer.
A method for fabricating a MEMS device which comprises:
- obtaining a structure which comprises the structural layer of a MEMS device, a main sacrificial layer and an additional sacrificial buffer layer located between the MEMS structural layer and main sacrificial layer, wherein the additional sacrificial buffer layer is a different material than the main sacrificial layer and has weaker bonding strength to both the sacrificial layer and MEMS structural material as compared to the bonding strength between the main sacrificial layer and MEMS structural layer and separating the MEMS structural layer from the main sacrificial layer and additional sacrificial buffer layer to thereby provide the MEMS device, wherein the main sacrificial layer has a thickness of about 10 nanometers to about 50,000 nanometers and the additional sacrificial buffer layer has a thickness of 100 nanometers or less and is thinner than the main sacrificial layer.
A method for fabricating a MEMS device which comprises:
- obtaining a structure which comprises the structural layer of a MEMS device, a main sacrificial layer and an additional sacrificial buffer layer located between the MEMS structural layer and main sacrificial layer, wherein the additional sacrificial buffer layer is a different material than the main sacrificial layer and has weaker bonding strength to both the sacrificial layer and MEMS structural material as compared to the bonding strength between the main sacrificial layer and MEMS structural layer and separating the MEMS structural layer from the main sacrificial layer and additional sacrificial buffer layer to thereby provide the MEMS device, wherein the additional sacrificial buffer layer has a bonding strength with the MEMS structural layer and main sacrificial layer of about 20 MPa/ml1/2 or less, and wherein the bond between the main sacrificial layer, additional sacrificial buffer layer and MEMS structural layer is broken or weakened prior to said separating the MEMS structural layer from the main sacrificial layer and additional sacrificial buffer layer.
Dependencies are inferred from the claim text.