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US 8,541,841 B2Granted
Semiconductor devices and semiconductor device manufacturing methods
AssigneeSamsung Electronics Co., Ltd.
InventorsWon-joo Kim, Sang-moo Choi, Tae-hee Lee, Yoon-dong Park
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Abstract
Semiconductor devices and semiconductor device manufacturing methods. The semiconductor device manufacturing methods may form a memory cell having a silicon on insulator (SOI) structure only in one or more localized regions of a bulk semiconductor substrate by use selective etching. Accordingly, a different bias voltage may be applied to a peripheral device than to a memory cell having the SOI structure.
Claims5
A semiconductor device including a localized silicon on insulator (SOI) structure, comprising:
- a substrate region;
- a first well of a first conductive type in the substrate region;
- a second well of a second conductive type;
- a third well of the second conductive type;
- a silicon on insulator (SOI) structure filling a recess in the substrate region above the third well,
- wherein the second well and the third well are separated by the first well and are formed in two side regions of the first well so as not to be adjacent to each other, at least one of the second well and the third well are on the first well,
- wherein a drain and a source of a first transistor are in the second well, and a drain and a source of a second transistor are in the SOI structure, and
- wherein driving circuits include the first transistor, and memory cells include the second transistor.
5 more elements
Dependencies are inferred from the claim text.