Semiconductor component and method for producing it

A semiconductor component comprising:

• a semiconductor body having:
• a first electrode electrically connected to a first zone of the semiconductor body;
• a second electrode electrically connected to a second zone of the semiconductor body;
• a drift path region arranged in the semiconductor body between the first electrode and the second electrode;
• a cell region having:
• a main cell region with main cells;
• and
• an auxiliary cell region with auxiliary cells;
• wherein the breakdown voltage of the auxiliary cells is greater than the breakdown voltage of the main cells;
• and
• wherein the main cell region and the auxiliary cell region include respective a trench structures having trench walls, and wherein an oxide thickness profile along the trench walls of the trench structure in the main cell region differs from an oxide thickness profile of the trench walls of the trench structures of the field plates in the auxiliary cell region.

A semiconductor component comprising:

• a semiconductor body having:
• a first electrode electrically connected to a first zone of the semiconductor body;
• a second electrode electrically connected to a second zone of the semiconductor body;
• a drift path region arranged in the semiconductor body between the first electrode and the second electrode;
• a cell region having:
• a main cell region with main cells;
• and
• an auxiliary cell region with auxiliary cells;
• wherein the breakdown voltage of the auxiliary cells is greater than the breakdown voltage of the main cells;
• wherein the drift path region has drift zones and field plates, wherein the drift zones are longer in the auxiliary cell region than in the main cell region;
• and
• wherein the field plates are arranged in a trench structure and project vertically into the semiconductor body in the drift path region, wherein the trench walls have an insulating layer and the trench structure is filled with an electrically conductive material or with a dielectric material.