Methods for depositing high-K dielectrics

A film stack comprising:

• a platinum electrode deposited on a substrate using physical vapor deposition (PVD) with a pedestal temperature of greater than 250° C. and a working gas having an oxygen partial pressure of greater than 10 percent, wherein the electrode is treated using an oxygen plasma;
• a titanium oxide layer deposited on the platinum electrode, wherein the titanium oxide layer is at least a portion rutile titanium oxide;
• and
• wherein the titanium oxide layer is doped with at least one of yttrium oxide or aluminum oxide.

A film stack comprising:

• a platinum electrode deposited on a substrate using physical vapor deposition (PVD) with a pedestal temperature of greater than 250° C. and a working gas having an oxygen partial pressure of greater than 10 percent, wherein the electrode is treated using an oxygen plasma;
• and
• a titanium oxide layer deposited on the platinum electrode, wherein the titanium oxide layer is at least a portion rutile titanium oxide;
• and
• wherein the film stack is annealed using a rapid thermal oxidation (RTO) process of at least approximately 600° C.