Semiconductor device and method for producing the same

A method for producing a semiconductor device, the semiconductor device comprising:

• a gate electrode located on a silicon substrate via a gate insulating film;
• a channel located on a surface layer of the silicon substrate under the gate electrode;
• a pair of drift layers having the channel therebetween in a channel-length direction;
• and
• a silicon layer located on each of the pair of drift layers and working as a source/drain, wherein
• a lower wiring layer is the pair of drift layers, an upper wiring layer is the source/drain, and the silicon carbide layer is located between the drift layers and the source/drain,
• the method comprising the steps of:
• forming a silicon carbide layer on the lower wiring layer or a surface layer of the lower wiring layer, the lower wiring layer being composed of silicon and formed on the silicon substrate or a surface layer of the silicon substrate;
• and
• forming the upper wiring layer on the silicon carbide layer;
• wherein the lower wiring layer is the pair of drift layers and the upper wiring layer is the source/drain.