Method of forming a non-volatile electron storage memory and the resulting device
AssigneeMicron Technology, Inc.
InventorsShubneesh Batra, Gurtej Sandhu
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Abstract
The invention provides a method of forming an electron memory storage device and the resulting device. The device comprises a gate structure which, in form, comprises a first gate insulating layer formed over a semiconductor substrate, a self-forming electron trapping layer of noble metal nano-crystals formed over the first gate insulating layer, a second gate insulating layer formed over the electron trapping layer, a gate electrode formed over the second gate insulating layer, and source and drain regions formed on opposite sides of the gate structure.
Claims17
A method of manufacturing an electron storage device comprising:
- providing a tunnel oxide material on a substrate;
- forming self-forming nano-crystals over the tunnel oxide material, wherein said act of forming the self-forming nano-crystals comprises annealing a noble metal material to form beads;
- providing an insulating material over the tunnel oxide material and over and between the self-forming nano-crystals;
- providing one of a barrier layer or a silicon dioxide layer over the insulating material;
- and
- providing a gate material over the self-forming nano-crystals.
A method of manufacturing an electron storage device comprising:
- providing a tunnel oxide material on a substrate;
- forming self-forming nano-crystals over the tunnel oxide material by annealing a noble metal material to form beads, wherein during the annealing the noble metal material is exposed to an atmosphere comprising a gas selected from O2 and N2;
- and
- providing a gate material over the self-forming nano-crystals.
The method of 7, wherein the insulating material comprises a material selected from the group consisting of Ta2O5, BaSrTiO3, HfO2, and ZrO2.
A method of manufacturing an electron storage device comprising:
- providing a tunnel oxide material on a substrate;
- forming self-forming nano-crystals over the tunnel oxide material by annealing a noble metal material to form beads, wherein the noble metal is provided by a process selected from chemical vapor deposition, atomic layer deposition, and physical layer deposition;
- and
- providing a gate material over the self-forming nano-crystals.
A method of manufacturing an electron storage device comprising:
- providing a tunnel oxide material on a substrate;
- forming self-forming nano-crystals over the tunnel oxide material by annealing a noble metal material to form beads, wherein the noble metal is provided by chemical vapor deposition including reacting (trimethyl)-methylcyclopentadienyl platinum (IV) with oxidizing gases;
- and
- providing a gate material over the self-forming nano-crystals.
A method of manufacturing an electron storage device comprising:
- providing a tunnel oxide material on a substrate;
- forming self-forming and non-reactive nano-crystals over the tunnel oxide material by annealing a noble metal material to form the self-forming and non-reactive nano-crystals as beads on the tunnel oxide material;
- providing an insulating layer over the tunnel oxide material and over and between the self-forming, non-reactive nano-crystals;
- and
- providing a gate material over the self-forming nano-crystals.
A method of manufacturing a non-volatile, electron storage memory device comprising a gate structure comprising a substrate, an tunnel oxide, an electron storage region, and a gate material, comprising:
- providing a semiconductor substrate;
- providing a tunnel oxide material on the semiconductor substrate;
- depositing a noble metal material over the tunnel oxide material;
- annealing the noble metal material to form nano-crystals;
- providing a high dielectric constant material layer on the tunnel oxide material and on and between the nano-crystals;
- forming a barrier layer over the high dielectric constant material layer;
- and
- providing a gate material over the barrier layer.
Dependencies are inferred from the claim text.