Semiconductor device including through-electrode

A camera module comprising:

• a first insulating film formed on a first major surface of a semiconductor substrate;
• an electrode pad formed in the first insulating film on the first major surface, the electrode pad including a conductive film, and at least a part of the electrode pad including a free region in which the conductive film is not present when viewed from a direction perpendicular to the first surface of the semiconductor substrate;
• an external connection terminal formed on a second major surface facing the first major surface of the semiconductor substrate;
• a through-electrode formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad, the through-electrode electrically connecting the electrode pad and the external connection terminal to each other;
• a dummy film formed in the first insulating film between the semiconductor substrate and the electrode pad, the dummy film being arranged at a position corresponding to the electrode pad in a direction perpendicular to the first major surface of the semiconductor substrate,
• an imaging element formed on the first major surface of the semiconductor substrate;
• a color filter arranged on the imaging element to correspond to the imaging element;
• a microlens arranged on the color filter;
• and
• an imaging lens arranged on the microlens,
• wherein the first insulating film is present in the free region included in the electrode pad, and the first insulating film in the free region in contact with the through-electrode has a thickness less than a thickness of the electrode pad.