US 8,541,817 B2 · Multilayer barrier III-nitride transistor for high voltage electronics

Abstract

An improved high breakdown voltage semiconductor device and method for manufacturing is provided. The device has a substrate and a AlaGa1-aN layer on the substrate wherein 0.1≦a≦1.00. A GaN layer is on the AlaGa1-aN layer. An In1-bGabN/GaN channel layer is on the GaN layer wherein 0.1≦b≦1.00. A AlcIndGa1-c-dN spacer layer is on the In1-bGabN/GaN layer wherein 0.1≦c≦1.00 and 0.0≦d≦0.99. A AleIn1-eN nested superlattice barrier layer is on the AlcIndGa1-c-dN spacer layer wherein 0.10≦e≦0.99. A AlfIngGa1-f-gN leakage suppression layer is on the AleIn1-eN barrier layer wherein 0.1≦f≦0.99 and 0.1≦g≦0.99 wherein the leakage suppression layer decreases leakage current and increases breakdown voltage during high voltage operation. A superstructure, preferably with metallic electrodes, is on the AlfIngGa1-f-gN leakage suppression layer.

Claims73

Dependent claims

A high breakdown voltage semiconductor device comprising:

a substrate;
a AlaGa1-aN layer on said substrate wherein 0.1≦a≦1.00;
a GaN layer on said AlaGa1-aN layer;
a In1-bGabN/GaN channel layer on said GaN layer wherein 0.1≦b≦1.00;
an AlcIndGa1-c-dN spacer layer on said In1-bGabN/GaN layer wherein 0.1≦c≦1.00 and 0.0≦d≦0.99;
a AleIn1-eN nested superlattice barrier layer on said AlcIndGa1-c-dN spacer layer wherein 0.10≦e≦0.99;
a AlfIngGa1-f-gN leakage suppression layer over on said AleIn1-eN barrier layer wherein 0.1≦f≦0.99 and 0.1≦g≦0.99 wherein said leakage suppression layer decreases leakage current and increases breakdown voltage during high voltage operation;
and
a superstructure on said AlfIngGa1-f-gN leakage suppression layer.

6 more elements

Dependencies are inferred from the claim text.

Multilayer barrier III-nitride transistor for high voltage electronics

Life of this patent

Multilayer barrier III-nitride transistor for high voltage electronics

Life of this patent

Abstract

Claims73