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AssigneeSumitomo Electric Industries, Ltd.
InventorsShin Hashimoto, Tatsuya Tanabe
Estimating the term…
In a group III nitride hetero junction transistor 11a, a second AlY1InY2Ga1-Y1-Y2N layer 15 forms a hetero junction 21 with a first AlX1InX2Ga1-X1-X2N layer 13a. A first electrode 17 forms a Schottky junction with the first AlX1InX2Ga1-X1-X2N layer 13a. The first AlX1InX2Ga1-X1-X2N layer 13a and the second AlY1InY2Ga1-Y1-Y2N layer 15 are provided over a substrate 23. The electrodes 17a, 18a, and 19a include a source electrode, a gate electrode, and a drain electrode, respectively. The carbon concentration NC13 in the first AlX1InX2Ga1-X1-X2N layer 13a is less than 1×1017 cm−3. The dislocation density D in the second AlY1InY2Ga1-Y1-Y2N layer 15 is 1×108 cm−2. The hetero junction 21 generates a two-dimensional electron gas layer 25. These provide a low-loss gallium nitride based electronic device.
A group III nitride electronic device, comprising:
A group III nitride semiconductor epitaxial substrate for a group III nitride electronic device having a Schottky electrode, the group III nitride semiconductor epitaxial substrate comprising:
Dependencies are inferred from the claim text.