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US 8,541,815 B2Granted
High electron mobility transistor circuit
AssigneeFujitsu Semiconductor Limited
InventorsYoshihiro Takemae, Tsutomu Hosoda, Toshiya Sato
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Abstract
A transistor circuit includes a first high electron mobility transistor and a second high electron mobility transistor having a negative threshold voltage, wherein a source of the second high electron mobility transistor is coupled to a gate of the first high electron mobility transistor, and a gate of the second high electron mobility transistor is coupled to a source of the first high electron mobility transistor.
Claims6
A transistor circuit comprising:
- a first high electron mobility transistor;
- and
- a second high electron mobility transistor having a negative threshold voltage,
- wherein a source of the second high electron mobility transistor is coupled to a gate of the first high electron mobility transistor, and
- a gate of the second high electron mobility transistor is coupled to a source of the first high electron mobility transistor.
2 more elements
Dependencies are inferred from the claim text.