Semiconductor light emitting device and light emitting apparatus having the same

A semiconductor light emitting device comprising:

• a substrate;
• a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;
• a dielectric layer disposed on sidewalls of the active layer and the second conductive type semiconductor layer;
• and
• a first electrode on a plurality of sidewalls of at least one of the substrate and the first conductive semiconductor layer,
• wherein the first electrode includes an electrode pad on the plurality of sidewalls of the first conductive type semiconductor layer and a reflective electrode between the electrode pad and each of the sidewalls of the first conductive type semiconductor layer,
• wherein the first conductive type semiconductor layer includes an n-type semiconductor layer and the second conductive type semiconductor layer includes a p-type semiconductor layer,
• wherein the dielectric layer vertically overlaps with the reflective electrode and the electrode pad,
• wherein a bottom surface of the first conductive type semiconductor layer has a same width as a bottom surface of the active layer, and
• wherein a lower portion of the dielectric layer is located at a higher position than a top edge the electrode pad.

A semiconductor light emitting device comprising:

• a substrate;
• a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;
• a second electrode electrically connected to the second conductive type semiconductor layer;
• a dielectric layer disposed on sidewalls of the active layer and the second conductive type semiconductor layer;
• and
• a first electrode disposed on a plurality of sidewalls of the first conductive type semiconductor layer,
• wherein the first electrode includes an electrode pad on the plurality of sidewalls of the first conductive type semiconductor layer and a reflective electrode between the electrode pad and each of the sidewalls of the first conductive type semiconductor layer,
• wherein the dielectric layer vertically overlaps with the reflective electrode and the electrode pad, and
• wherein a lower portion of the dielectric layer is located at a higher position than a top edge the electrode pad.