Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device

A nitride semiconductor light emitting device comprising:

• a light emitting portion coated with a coating film, wherein
• said light emitting portion is formed of a nitride semiconductor, and
• said coating film is formed of a stack of an oxynitride film and an oxide film, and said oxynitride film is in contact with said light emitting portion, and
• said oxynitride film is an aluminum oxynitride film, and
• said oxide film is in contact with said oxynitride film, said oxynitride film being disposed between said oxide film and said light emitting portion,
• wherein said oxide film is not silicon oxide film, and
• a substrate of the nitride semiconductor light emitting device is a GaN substrate, and
• the nitride semiconductor light emitting device is a nitride semiconductor laser device and said light emitting portion is a facet of a cavity, the facet being a resonator face and a primary light emitting surface of the nitride semiconductor laser device.

A nitride semiconductor light emitting device comprising:

• a light emitting portion coated with a coating film, the light emitting portion being an endface perpendicular to a lengthwise direction of a ridged stripe portion of the nitride semiconductor light emitting device, wherein
• said light emitting portion is formed of a nitride semiconductor, and
• said coating film is formed of a stack of an oxynitride film and an oxide film, and
• said oxynitride film is an aluminum oxynitride film, and said oxynitride film is in contact with said light emitting portion, and
• said oxide film is in contact with said oxynitride film, said oxynitride film being disposed between said oxide film and said light emitting portion, and
• a substrate of the nitride semiconductor light emitting device is a GaN substrate, and
• the nitride semiconductor light emitting device is a nitride semiconductor laser device and said light emitting portion is a facet of a cavity, the facet being a resonator face and a primary light emitting surface of the nitride semiconductor laser device.

A nitride semiconductor light emitting device comprising:

• a light emitting portion coated with a coating film, the light emitting portion being an endface perpendicular to a lengthwise direction of a ridged stripe portion of the nitride semiconductor light emitting device, wherein
• said light emitting portion is formed of a nitride semiconductor, and
• said coating film is formed of a stack of an oxynitride film and an oxide film, and said oxynitride film is in contact with said light emitting portion, and
• said oxynitride film is an aluminum oxynitride film, and
• said oxide film is in contact with said oxynitride film, said oxynitride film being disposed between said oxide film and said light emitting portion,
• wherein said oxide film is not silicon oxide film, and
• a substrate of the nitride semiconductor light emitting device is a GaN substrate, and
• the nitride semiconductor light emitting device is a nitride semiconductor laser device and said light emitting portion is a facet of a cavity, the facet being a resonator face and a primary light emitting surface of the nitride semiconductor laser device.