Source of photons resulting from a recombination of localized excitons

Abstract

A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from λ0/10*ne to λ0/2*ne, where λ0 is the wavelength in vacuum of the emitted light and ne is the effective refractive index of the mode formed in the cavity created by the two metallizations.

Dependencies are inferred from the claim text.