Back to results
US 8,541,789 B2Granted
Light-emitting device with patterned current diffusion layer
AssigneeEpistar Corporation
InventorsChiu Lin Yao, Ya Ian Yang
Life of this patent
Estimating the term…
Abstract
Disclosed is a light-emitting device including a permanent substrate, an adhesive layer on the permanent substrate, a current diffusion layer on the adhesive layer, and a semiconductor stack layer on the current diffusion layer. The current diffusion layer has an etched portion and an unetched portion, wherein the etched and unetched portions have a horizontal height difference. The horizontal height difference and the current diffusion layer thickness have a ratio of 20:100 to 70:100.
Claims16
A light-emitting device, comprising:
- a permanent substrate;
- an adhesive layer on the permanent substrate;
- a current diffusion layer on the adhesive layer, wherein the current diffusion layer has an etched portion and an unetched portion;
- a semiconductor stack layer on the current diffusion layer, comprising:
- a second type semiconductor layer on the current diffusion layer;
- an active layer on the second type semiconductor layer;
- and
- a first type semiconductor layer on the active layer, wherein the first type semiconductor layer and the second type semiconductor layer have different electrical properties;
- and
- a middle layer between the current diffusion layer and the semiconductor stack layer, wherein the difference between a thickness of the etched portion and a thickness of the unetched portion is about 20% to 70% of the thickness of the unetched portion of the current diffusion layer.
7 more elements
Dependencies are inferred from the claim text.