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US 8,541,776 B2Granted
Nanostructure-based memory
AssigneeThe Regents of the University of California
InventorsPrabhakar R. Bandaru, Joel Hollingsworth
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Abstract
Improved memory devices that include one or more nanostructures such as carbon nanotubes or other nanostructures, as well as systems and devices incorporating such improved memory devices, are disclosed. In at least some embodiments, the improved memory device is of a nonvolatile type such as a flash memory device, and employs a pair of triodes that form a memory cell, where each triode employs at least one carbon nanotube. Also disclosed are methods of operating and fabricating such improved memory devices.
Claims14
A memory device comprising:
- a memory cell that includes:
- a first triode that includes a first nanostructure;
- a second triode that includes a second nanostructure;
- and
- a layer of metal that forms both an anode of the first triode and a cathode of the second triode;
- wherein the first nanostructure and the second nanostructure are positioned within a vacuum-sealed region.
3 more elements
Dependencies are inferred from the claim text.