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US 8,541,771 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-youn Kim, Su-hee Chae, Hyun-gi Hong, Young-jo Tak
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Abstract
Example embodiments relate to a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device may include a pre-seeding layer and a nucleation layer. The pre-seeding layer may include a first material for pre-seeding and a second material for masking so as to reduce tensile stress.
Claims25
A semiconductor device comprising:
- a pre-seeding layer comprising a first material and a second material distinct from the first material, the first material having properties that facilitate pre-seeding and the second material having properties that facilitate masking;
- a nucleation layer on the pre-seeding layer;
- a plurality of nitride semiconductor layers on the nucleation layer,
- at least one masking layer between the plurality of nitride semiconductor layers;
- and
- at least one inter layer between the plurality of nitride semiconductor layers, the at least one inter layer being on the at least one masking layer, the at least one inter layer configured to compensate for a tensile stress,
- wherein the at least one inter layer comprises a material selected from the group consisting of Alx0Iny0Ga1-x0-y0N (0≦x0, y0≦1, x0+y0≦1), step graded AlxInyGa1-x-yN (0≦x, y≦1, x+y≦1), and Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N (0≦x1, x2, y1, y2≦1, x1≠x2 or y1≠y2) superlattice.
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A semiconductor device comprising:
- a first pre-seeding layer comprising a first material and a second material distinct from the first material, the first material having properties that facilitate pre-seeding and the second material having properties that facilitate masking;
- a first nucleation layer on the first pre-seeding layer;
- a second pre-seeding layer on the first nucleation layer, the second pre-seeding layer comprising the first material that facilitates pre-seeding and the second material that facilitates masking;
- and
- a second nucleation layer on the second pre-seeding layer.
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A method of manufacturing a semiconductor device, the method comprising:
- growing a pre-seeding layer on a substrate, the pre-seeding layer comprising a first material and a second material distinct from the first material, the first material having properties that facilitate pre-seeding and the second material having properties that facilitate masking;
- growing a nucleation layer on the pre-seeding layer;
- and
- growing a nitride semiconductor layer on the nucleation layer,
- wherein the growing of the nucleation layer comprises injecting Al, Mg, and NH3 sources into a reactor, or injecting Al, Si, and NH3 sources into the reactor.
2 more elements
Dependencies are inferred from the claim text.