Back to results
US 8,541,770 B2Granted
Select devices including an open volume, memory devices and systems including same, and methods for forming same
AssigneeMicron Technology, Inc.
InventorsBhaskar Srinivasan, Gurtej S. Sandhu
Life of this patent
Estimating the term…
Abstract
Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
Claims21
A select device comprising:
- a dielectric material on a conductive material;
- another dielectric material on the dielectric material and extending substantially evenly beyond opposing side surfaces of the dielectric material;
- another conductive material overlying the another dielectric material;
- an open volume at least partially defined by a surface of the conductive material, an opposing surface of the another dielectric material, the opposing side surfaces of the dielectric material, and surfaces of spacers substantially coplanar with sidewalls of the another conductive material and the another dielectric material.
1 more element
A memory device comprising:
- at least one memory element;
- a plurality of bit lines;
- at least one wordline;
- and
- at least one select device comprising:
- a conductive material;
- a dielectric material on the conductive material;
- another dielectric material on the dielectric material and extending substantially the same distance beyond opposing side surfaces of the dielectric material;
- another conductive material over the another dielectric material;
- and
- an open volume between the conductive material and the another dielectric material and at least partially defined by the opposing side surfaces of the dielectric material and surfaces of spacers substantially coplanar with sidewalls of the another conductive material and the another dielectric material.
8 more elements
An electronic system comprising:
- at least one electronic signal processor;
- at least one memory device configured to communicate electrically with the at least one electronic signal processor, the at least one memory device comprising:
- at least one select device comprising:
- a conductive material;
- a dielectric material on the conductive material;
- another dielectric material on the dielectric material and substantially uniformly extending past opposing side surfaces of the dielectric material;
- another conductive material over the another dielectric material;
- an open volume extending between the another dielectric material and the conductive material and at least partially defined by the opposing side surfaces of the dielectric material and surfaces of spacers substantially coplanar with sidewalls of the another conductive material and the another dielectric material;
- and
- at least one of an input device and an output device configured to communicate electrically with the at least one electronic signal processor.
7 more elements
Dependencies are inferred from the claim text.