Semiconductor device having stacked structural bodies and method for manufacturing the same

A semiconductor device including:

• a first structural body having a first semiconductor device formed over a first region of a semiconductor substrate,
• a metal film formed over the first structural body being insulated from the first semiconductor device,
• a second structural body having a second semiconductor device formed over the metal film being insulated from the metal film,
• a third structural body formed over a second region of the semiconductor substrate and having a third semiconductor device insulated from the metal film, and
• a first connection member for electrically connecting the first semiconductor device and the third structural body, and a second connection member for electrically connecting and the second semiconductor device and the third structural body,
• wherein the metal film has a thermal conductivity lower than that of the first connection member and the second connection member, and
• wherein the second semiconductor device includes:
• a first conductive film formed over the main surface of the semiconductor substrate;
• a plurality of second insulating films and a plurality of second conductive films stacked alternately over the first conductive film,
• wherein the second insulating films and the second conductive films have a plurality of holes reaching the upper surface of the first conductive film,
• a third insulating layer, a channel semiconductor layer, and a phase-change material layer electrically connected with the first conductive film at the bottom of the holes formed successively from the side of the inner wall along the inner wall to each of the inner walls of the holes,
• a plurality of second interconnects formed over the channel semiconductor layer and over the second insulating film and extending in a stripe shape in a direction along the main surface of the semiconductor substrate, and
• a plurality of non-volatile memories each including portions of the second conductive films, the third insulating films, the channel semiconductor layers, and the phase-change material layer.

A semiconductor device including:

• a first structural body having a first semiconductor device formed over a first region of a semiconductor substrate,
• a metal film formed over the first structural body being insulated from the first semiconductor device,
• a second structural body having a second semiconductor device formed over the metal film being insulated from the metal film,
• a third structural body formed over a second region of the semiconductor substrate and having a third semiconductor device insulated from the metal film, and
• a first connection member for electrically connecting the first semiconductor device and the third structural body, and a second connection member for electrically connecting and the second semiconductor device and the third structural body,
• wherein the metal film has a thermal conductivity lower than that of the first connection member and the second connection member, and
• wherein the third semiconductor device includes:
• a gate insulating film formed over the semiconductor substrate,
• a gate electrode formed over the gate insulating film, and
• a plurality of impurity diffusion layers formed in the main surface of the semiconductor substrate so as to sandwich the semiconductor substrate at a portion below the gate electrodes.