Memory component having an electrical contact free of a metal layer
AssigneesNational University of Singapore, Agency for Science, Technology and Research
InventorsWeiwei Lina Fang, Yee Chia Yeo, Rong Zhao, Luping Shi
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Abstract
According to embodiments of the present invention, a memory component is provided. The memory component includes a storage component comprising a resistance changing material; and an electrical contact coupled to the storage component, wherein the electrical contact comprises silicide, wherein the memory component is free of a metal layer between the storage component and the electrical contact, and wherein the electrical contact is free of a metal layer.
Claims8
A memory component, comprising:
- a storage component comprising a resistance changing material;
- an electrical contact coupled to the storage component, wherein the electrical contact comprises silicide;
- and
- a dielectric layer disposed within the storage component;
- wherein the memory component is free of a metal layer between the storage component and the electrical contact, and
- wherein the electrical contact is free of a metal layer.
A method of forming a memory component, the method comprising:
- forming an electrical contact, the electrical contact comprising silicide and is free of a metal layer;
- depositing a storage component over the electrical contact, the storage component comprising a resistance changing material;
- and
- forming a dielectric layer within the storage component;
- wherein the method is free of forming a metal layer between the storage component and the electrical contact.
A memory component, comprising:
- a storage component comprising a resistance changing material;
- and
- an electrical contact coupled to the storage component, wherein the electrical contact comprises silicide, and
- wherein the memory component is free of a metal layer between the storage component and the electrical contact,
- wherein the electrical contact is free of a metal layer, and
- wherein the memory component further comprises a dielectric layer disposed over a portion of the electrical contact, wherein the portion overlaps with the entire storage component.
Dependencies are inferred from the claim text.