US 8,541,766 B2 · Nonvolatile memory device and nonvolatile memory apparatus

Abstract

According to one embodiment, a nonvolatile memory device includes a recording layer and a conductive first layer. The recording layer includes a main group element, a transition element, and oxygen. The recording layer is capable of recording information by changing reversibly between a high resistance state and a low resistance state. The first layer is made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide. The first layer is provided adjacent to the recording layer. The first layer includes the main group element with a concentration lower than a concentration of the main group element of the recording layer.

Claims26

Dependent claims

A nonvolatile memory device, comprising:

a recording layer including
a main group element,
a transition element, and
oxygen,
the recording layer being capable of recording information by changing reversibly between a high resistance state and a low resistance state;
and
a conductive first layer made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide and provided adjacent to the recording layer, the first layer including the main group element with a concentration lower than a concentration of the main group element of the recording layer.

4 more elements

A nonvolatile memory apparatus, comprising:

a nonvolatile memory device, including:
a recording layer including
a main group element,
a transition element, and
oxygen,
the recording layer being capable of recording information by changing reversibly between a high resistance state and a low resistance state;
and
a conductive first layer made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide and provided adjacent to the recording layer, the first layer including the main group element with a concentration lower than a concentration of the main group element of the recording layer;
and
a drive unit configured to record information by causing the recording layer to transition between the high resistance state and the low resistance state by at least one selected from applying a voltage to the recording layer of the nonvolatile memory device and causing a current to flow in the recording layer.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/043,097Filed 8 Mar 2011 · continuation

Priority

8 Sep 2008

Published

US 2011/0216575 A18 Sep 2011

Granted

24 Sep 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

G11C 13/003
Auxiliary circuits: cell access
H10N 70/245
Based on migration or redistribution of ionic species, e.g. anions, vacancies: the species being metal cations, e.g. programmable metallization cells
H10N 70/826
Device geometry: adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
H10N 70/8416
Electrodes: adapted for supplying ionic species

Nonvolatile memory device and nonvolatile memory apparatus

Life of this patent

Nonvolatile memory device and nonvolatile memory apparatus

Life of this patent

Abstract

Claims26