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US 8,541,765 B2Granted
Resistance variable memory cell structures and methods
AssigneeMicron Technology, Inc.
InventorsEugene P. Marsh, Timothy A. Quick
Life of this patent
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Abstract
Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.
Claims30
A method of forming a memory cell, comprising:
- forming a resistance variable memory cell material on a first electrode and a wall of a via;
- forming a first dielectric material on the resistance variable memory cell material;
- removing a portion of the first dielectric material such that a portion of the resistance variable memory cell material is exposed;
- forming a second electrode on a first exposed portion of the resistance variable memory cell material and third electrode on a second exposed portion of the resistance variable memory cell material;
- and
- forming a spacer material on at least a portion of the second electrode, the third electrode, and the first dielectric material.
3 more elements
A method of forming a memory cell, comprising:
- forming a memory cell structure having a via formed over a first electrode;
- forming a phase change material on the first electrode and on the walls of the via such that a gap remains between the walls of the via;
- forming a first dielectric material on the phase change material;
- removing a portion of the first dielectric material such that a portion of the phase change material is exposed and such that the first dielectric material remains only in the gap;
- forming a second electrode on a first exposed portion of the phase change material and third electrode on a second exposed portion of the phase change material;
- forming a spacer material on at least a portion of the second electrode, the third electrode, and the first dielectric material located in the gap;
- and
- removing at least a portion of the spacer material between the second and third electrodes, at least a portion of the first dielectric material within the via, and at least a portion of the phase change material formed on the first electrode such that a first and a second phase change memory cell structure is formed.
5 more elements
A resistance variable memory cell structure, comprising:
- a first electrode common to a first and a second resistance variable memory cell;
- a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode;
- and
- a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode;
- wherein the first electrode is made of a material different than at least one of the second and the third electrodes.
2 more elements
An array of resistance variable memory cells having at least a first and a second resistance variable memory cell structure formed according to a method, comprising:
- forming a memory cell structure having a via formed over a first electrode;
- forming a resistance variable memory cell material on the first electrode and a wall of the via;
- forming a first dielectric material on the resistance variable memory cell material;
- removing a portion of the first dielectric material such that a portion of the resistance variable memory cell material is exposed;
- forming a second electrode on a first exposed portion of the resistance variable memory cell material and third electrode on a second exposed portion of the resistance variable memory cell material;
- forming a spacer material on at least a portion of the second electrode, the third electrode, and the first dielectric material;
- and
- forming the first and the second resistance variable memory cell structure by removing at least a portion of the spacer material between the second and third electrodes, at least a portion of the first dielectric material within the via, and at least a portion of the resistance variable memory cell material formed on the first electrode.
5 more elements
A method of forming a memory cell, comprising:
- forming a resistance variable memory cell material on a first electrode and a wall of a via such that the resistance variable memory cell material has a thickness of no greater than 5 nanometers;
- forming a first dielectric material on the resistance variable memory cell material;
- removing a portion of the first dielectric material such that a portion of the resistance variable memory cell material is exposed;
- and
- forming a second electrode on a first exposed portion of the resistance variable memory cell material and third electrode on a second exposed portion of the resistance variable memory cell material.
2 more elements
A method of forming a memory cell, comprising:
- forming a resistance variable memory cell material on a first electrode and a wall of a via;
- forming a first dielectric material on the resistance variable memory cell material;
- removing a portion of the first dielectric material such that a portion of the resistance variable memory cell material is exposed;
- and
- forming a second electrode on a first exposed portion of the resistance variable memory cell material and third electrode on a second exposed portion of the resistance variable memory cell material;
- wherein the first electrode is formed of a material that is different than at least one of the second and the third electrode.
3 more elements
A resistance variable memory cell structure, comprising:
- a first electrode common to a first and a second resistance variable memory cell;
- a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode;
- and
- a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode;
- wherein an arcuate portion of the first and the second vertically oriented resistance variable material is located between a first dielectric material and a second dielectric material;
- and
- wherein the arcuate portion of the first vertically oriented resistance variable material is located a distance of not more than 20 nanometers from the arcuate portion of the second vertically oriented resistance variable material.
4 more elements
A resistance variable memory cell structure, comprising:
- a first electrode common to a first and a second resistance variable memory cell;
- a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode;
- and
- a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode;
- wherein an arcuate portion of the first and the second vertically oriented resistance variable material is located between a first dielectric material and a second dielectric material;
- and
- wherein a spacer material is formed on the first dielectric material and on an edge of the second electrode and an edge of the third electrode.
4 more elements
A resistance variable memory cell structure, comprising:
- a first electrode common to a first and a second resistance variable memory cell;
- a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode;
- and
- a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode;
- wherein the first vertically oriented resistance variable material and the second vertically oriented resistance variable material have a thickness of not greater than 5 nanometers.
2 more elements
Dependencies are inferred from the claim text.