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US 8,541,750 B2Granted
X-ray detector and fabrication method thereof
AssigneeAu Optronics Corporation
InventorsYu-Cheng Chen, An-Thung Cho, Ching-Sang Chuang, Chia-Tien Peng
Life of this patent
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Abstract
A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.
Claims32
An X-ray detector, comprising:
- a substrate, comprising a photo-sensing area;
- a patterned first conductive layer disposed on the substrate, the patterned first conductive layer comprising at least a gate positioned in the photo-sensing area;
- a gate insulating layer disposed on the substrate and covering the gate;
- a patterned semiconductor layer disposed on a surface of the gate insulating layer above the gate, the patterned semiconductor layer comprising a semiconductor channel region;
- a patterned second conductive layer, comprising at least a source and a drain disposed on the patterned semiconductor layer and positioned at two sides of the semiconductor channel region respectively;
- a dielectric layer disposed on the substrate and covering the semiconductor channel region and a portion of the patterned second conductive layer, the dielectric layer comprising a first via hole that exposes a portion of the drain;
- a patterned third conductive layer, comprising a bottom sensing electrode positioned in the photo-sensing area and disposed above the patterned semiconductor layer, the bottom sensing electrode being electrically connected to the drain through the first via hole;
- a patterned photosensitive silicon-rich (Si-rich) dielectric layer, disposed on a surface of the bottom sensing electrode;
- a patterned transparent conductive layer, comprising a top sensing electrode disposed on a surface of the patterned photosensitive Si-rich dielectric layer;
- a passivation layer, covering at least a portion of the patterned transparent conductive layer;
- and
- a scintillator layer, disposed above the passivation layer and corresponding to the patterned photosensitive Si-rich dielectric layer.
9 more elements
A fabrication method of X-ray detector, comprising:
- providing a substrate, the substrate comprising a photo-sensing area;
- forming a thin film transistor (TFT) on the substrate, the TFT comprising a gate, a gate insulating layer, a patterned semiconductor layer, a source, and a drain;
- forming a patterned dielectric layer on the substrate, the patterned dielectric layer having at least a first via hole that exposes a portion of the drain;
- forming a patterned third conductive layer on the substrate, the patterned third conductive layer comprising a bottom sensing electrode positioned in the photo-sensing area and being electrically connected to the drain through the first via hole, and the patterned third conductive layer being positioned above the patterned semiconductor layer;
- forming a patterned photosensitive Si-rich dielectric layer on the substrate, the patterned photosensitive Si-rich dielectric layer being disposed on a surface of the bottom sensing electrode;
- forming a patterned transparent conductive layer on the substrate, the patterned transparent conductive layer comprising at least a top sensing electrode covering the patterned photosensitive Si-rich dielectric layer;
- forming a passivation layer on the substrate to cover the patterned transparent conductive layer;
- and
- forming a scintillator layer on the substrate, the scintillator layer being disposed on the passivation layer and corresponding to the patterned Si-rich dielectric layer.
6 more elements
An X-ray detector, comprising:
- a substrate, comprising a photo-sensing area;
- a thin film transistor (TFT) positioned in the photo-sensing area on the substrate, the TFT comprising a gate, a gate insulating layer, a patterned semiconductor layer with a semiconductor channel region, a source, and a drain;
- a dielectric layer disposed on the substrate and covering the semiconductor channel region, the source, and a portion of the drain, the dielectric layer comprising a first via hole that exposes a portion of the drain;
- a patterned third conductive layer, comprising a bottom sensing electrode positioned in the photo-sensing area and disposed above the patterned semiconductor layer, the bottom sensing electrode being electrically connected to the drain through the first via hole;
- a patterned photosensitive silicon-rich (Si-rich) dielectric layer, disposed on a surface of the bottom sensing electrode;
- a patterned transparent conductive layer, comprising a top sensing electrode disposed on a surface of the patterned photosensitive Si-rich dielectric layer;
- a passivation layer, covering at least a portion of the patterned transparent conductive layer;
- and
- a scintillator layer, disposed above the passivation layer and corresponding to the patterned photosensitive Si-rich dielectric layer.
6 more elements
An X-ray detector, comprising:
- a substrate, comprising a photo-sensing area and a periphery area disposed at a side of the photo-sensing area;
- a patterned first conductive layer disposed on the substrate, the patterned first conductive layer comprising at least a gate positioned in the photo-sensing area and a first contact pad positioned in the periphery area;
- a gate insulating layer disposed on the substrate and covering the gate;
- a patterned semiconductor layer disposed on a surface of the gate insulating layer above the gate, the patterned semiconductor layer comprising a semiconductor channel region;
- a patterned second conductive layer, comprising at least a source and a drain disposed on the patterned semiconductor layer and positioned at two sides of the semiconductor channel region respectively, and a second contact pad and a third contact pad positioned in the periphery area;
- a dielectric layer disposed on the substrate and covering the semiconductor channel region and a portion of the patterned second conductive layer, the dielectric layer comprising a first via hole that exposes a portion of the drain, wherein the dielectric layer exposes portions of the first contact pad and the second contact pad;
- a patterned third conductive layer, comprising a bottom sensing electrode positioned in the photo-sensing area and disposed above the patterned semiconductor layer, the bottom sensing electrode being electrically connected to the drain through the first via hole, wherein the patterned third conductive layer further comprises a first contact plug and a second contact plug electrically connected to the first contact pad and the second contact pad respectively;
- a patterned photosensitive silicon-rich (Si-rich) dielectric layer, disposed on a surface of the bottom sensing electrode;
- a patterned transparent conductive layer, comprising a top sensing electrode disposed on a surface of the patterned photosensitive Si-rich dielectric layer;
- a passivation layer, covering at least a portion of the patterned transparent conductive layer;
- and
- a scintillator layer, disposed above the passivation layer and corresponding to the patterned photosensitive Si-rich dielectric layer.
9 more elements
Dependencies are inferred from the claim text.